Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Semiconductor Lasers I

HL 10.1: Talk

Monday, March 20, 2017, 09:30–09:45, POT 06

Carrier dynamics in tunnel-injection quantum-dot structures — •Stephan Michael, Michael Lorke, Christian Carmesin, and Frank Jahnke — Institute of Theoretical Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

For tunnel-injection (TI) quantum-dot (QD) lasers record high small signal modulation bandwidth up to 15 GHz and also high performance of 1.55 µm InAs QDs on InP-based hetero-structures (1) were reported, which shows the enormous application potential for high-speed optical communication networks. The optimal design of future TI lasers benefits from a detailed understanding of the physics and the interplay of various interaction processes involved in such TI devices. We investigated theoretically the carrier dynamics in TI structures by explicitly calculating carrier-phonon and carrier-carrier scattering processes using a material realistic model of the electronic structure based on a discretized Kane Hamiltonian. In doing so, we shed light on the underlying tunneling processes and highlight the importance of hybridized states for high scattering rates. We further specify criteria based on our microscopic calculation to engineer optimal scattering pathways necessary to obtain TI structures for high-speed laser devices.

(1) S. Bhowmick, M. Z. Baten, T. Frost, B. S. Ooi, and P. Bhattacharya, IEEE JQE 50, NO. 1 7-14 (2014)