Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 10: Semiconductor Lasers I
HL 10.2: Vortrag
Montag, 20. März 2017, 09:45–10:00, POT 06
Simulation of monolithically integrated GaAs-AlGaAs core-shell nanowire lasers on silicon waveguides — •Jochen Bissinger, Thomas Stettner, Tobias Kostenbader, Daniel Ruhstorfer, Gregor Koblmueller, and Jonathan Finley — Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching
III-V semiconductor nanowire (NW) lasers monolithically integrated on silicon have attracted attention as potential on-chip light sources for optical interconnects. Their unique one-dimensional geometry is both an active gain medium and a natural Fabry-Pérot cavity. However, direct integration of NW-lasers on silicon (Si) is challenging due to the poor modal reflectivity at the NW-Si interface. Recently, we demonstrated how by patterning nano-apertures in a thick SiO2-interlayer at the NW-Si interface, low-order mode lasing is observed with high β-factors [1]. Such schemes also enable the integration of NW lasers on silicon-on-insulator waveguides and suggest the feasibility of NW-based photonic devices.
In this contribution we simulated the optical loss of GaAs-based NW lasers and their coupling behaviour to a Si-waveguide in dependence of the different design parameters of the system. The performance of the device is found to be mainly affected by the type of lasing mode and the thicknesses of the SiO2-interlayer and the Si-waveguide. These studies therefore serve as a guideline in the construction of optimized NW lasers on SOI waveguides for future on-chip optical interconnects.
B. Mayer et al., Nano Lett., 16 (1), pp 152-156 (2016).