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HL: Fachverband Halbleiterphysik

HL 10: Semiconductor Lasers I

HL 10.4: Vortrag

Montag, 20. März 2017, 10:15–10:30, POT 06

The MECSEL: A new laser concept towards AlGaInP-based direct laser emission in the orange spectral range — •Raffael Pecoroni, Hermann Kahle, Roman Bek, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Centers ScoPE and IQST, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

The new MECSEL (membrane external-cavity surface-emitting laser) concept consists of an active region without integrated DBR (distributed Bragg reflector), sandwiched in between two intra-cavity heat spreaders. The advantage now is that unusual material combinations can be used as active regions as growth restrictions due to lattice mismatch do not play a role anymore. Furthermore, no limitation of absorbing DBR layers have to be taken into account. This allows us now to reach for example the orange spectral range with an AlGaInP-based active region. Here, we include Al_0.33GaInP quantum wells into Al_0.55GaInP-barrier layers, release wet-chemically etched the substrate and sandwich it between intra-cavity heat spreaders. First characterization measurements of the gain membranes and the operation as vertical emitting laser will be presented.