Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Semiconductor Lasers I

HL 10.9: Talk

Monday, March 20, 2017, 12:00–12:15, POT 06

Intensity and Wavefront Analysis of Multimode Semiconductor Lasers — •Inga-Maria Eichentopf and Martin Reufer — Hochschule Ruhr West, Institut Naturwissenschaften, Mülheim an der Ruhr, Germany

To analyse the beam characteristics of laser sources wavefront measurements using a Shack-Hartmann Sensor became an established way for nearly Gaussian beams. The aim of our research is to transfer this method to broad area semiconductor lasers. The multimode lasers we utilize in our studies are based on the material system of GaAs emitting light in the near infrared. For this type of laser the number and structure of optical modes is affected by electrical as well as thermal effects inside the laser resonator. Thereby the changes in modal composition can be detected instantaneously through the deformation of the wavefront. For our investigations we use a so called Gaussian telescope setup to magnify the cross section of the laser beam and to increase the length of spatial transition from optical near to far field. This approach is used to analyze the emission evolution of high power laser diodes which emit a multitude of optical modes.