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HL: Fachverband Halbleiterphysik

HL 14: Poster: Two-Dimenaional Materials and Topological Insulators

HL 14.3: Poster

Montag, 20. März 2017, 14:00–18:00, P2-OG3

Modulation of the Optical Gas-Sensing Performance of Single-Layer MoS2 Transistors by Electric Gating — Philip Klement¹, Paula Neuderth¹, Sangam Chatterjee¹, and •Martin Eickhoff^1,2 — ¹Institute of Experimental Physics I, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany — ²Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

Two-dimensional transition metal dichalcogenides such as MoS₂ are promising candidates for gas-sensing applications due to their large surface-to-volume ratio. They offer the possibility of an optical detection of the gas-sensing effect. However, the performance is limited due to a low response, slow recovery and a lack of selectivity [1]. The application of a perpendicular electric field modulates the adsorption of gas molecules and therefore may improve the performance [2]. Here, we detected the adsorption of different gas molecules to MoS₂ optically with a perpendicular electric field. We studied the optical response under different gate voltages and gas concentrations and found a systematic modulation of the optical emission and response.

[1] Ko, K. Y., et al., ACS Nano 10, 9287-9296 (2016). [2] Yue, Q., et al., Nanoscale Res Lett. 8, 425 (2013).