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HL: Fachverband Halbleiterphysik

HL 14: Poster: Two-Dimenaional Materials and Topological Insulators

HL 14.8: Poster

Montag, 20. März 2017, 14:00–18:00, P2-OG3

Optical Absorption and Darkfield Microscopy on Two-Dimensional Semiconductors — •Konstantin Neuhaus¹, Edward Leong², Thomas E. Murphy^2,3, Martin Mittendorff³, and Sangam Chatterjee⁴ — ¹Faculty of Physics, Philipps-Universität Marburg, D-35032 Marburg, Germany — ²Department of Electrical & Computer Engineering, University of Maryland, College Park, MD, 20742, USA — ³Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, MD, 20742, USA — ⁴Institute of Experimental Physics I, Justus-Liebig University Giessen, D-35392 Gießen, Germany

The optical properties of two-dimensional semiconductors offer a great potential in technological applications from FETs, gas sensors and solar cells to new optoelectronic devices. Furthermore, the potential is enhanced by the possibility of assembling heterostructures of different layers, thereby tuning the bandgap and other optoelectronic properties.

Here, we investigate the ability to locate and identify monolayer structures of molybdenum disulfide (MoS2) and black phosphorus by means of optical darkfield microscopy and high spatial resolution absorption measurements at room temperature. Especially MoS2 monolayers are easily identified in darkfield microscopy because of their characteristic triangular shapes.