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HL: Fachverband Halbleiterphysik
HL 14: Poster: Two-Dimenaional Materials and Topological Insulators
HL 14.8: Poster
Monday, March 20, 2017, 14:00–18:00, P2-OG3
Optical Absorption and Darkfield Microscopy on Two-Dimensional Semiconductors — •Konstantin Neuhaus1, Edward Leong2, Thomas E. Murphy2,3, Martin Mittendorff3, and Sangam Chatterjee4 — 1Faculty of Physics, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2Department of Electrical & Computer Engineering, University of Maryland, College Park, MD, 20742, USA — 3Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, MD, 20742, USA — 4Institute of Experimental Physics I, Justus-Liebig University Giessen, D-35392 Gießen, Germany
The optical properties of two-dimensional semiconductors offer a great potential in technological applications from FETs, gas sensors and solar cells to new optoelectronic devices. Furthermore, the potential is enhanced by the possibility of assembling heterostructures of different layers, thereby tuning the bandgap and other optoelectronic properties.
Here, we investigate the ability to locate and identify monolayer structures of molybdenum disulfide (MoS2) and black phosphorus by means of optical darkfield microscopy and high spatial resolution absorption measurements at room temperature. Especially MoS2 monolayers are easily identified in darkfield microscopy because of their characteristic triangular shapes.