Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 15: Focus Session: Two-dimensional materials II (joined session with TT)
HL 15.7: Talk
Monday, March 20, 2017, 17:15–17:30, POT 81
Controlled MoS2 deposition by metal-organic vapour phase epitaxy — Matthias Marx1, Dominik Andrzejewski2, Annika Grundmann1, You-Ron Lin1,3, Gerd Bacher2, Holger Kalisch1, Andrei Vescan1, and •Michael Heuken1,3 — 1GaN Device Technology, RWTH Aachen University — 2WET, University Duisburg-Essen — 3AIXTRON SE
Recently, layered transition metal dichalcogenides (TMDC) have attracted a lot of attention. Their thermodynamically stable 2D form and their unique electrical and optical properties are very promising for integration in future electronic devices. For systematic scientific studies and in particular for implementation in commercial devices, it will be necessary to achieve a reproducible, homogeneous and scalable deposition on wafer scale. A promising option to achieve this goal is to use metal-organic vapour phase epitaxy (MOVPE) processes employing MO precursors for the TMDC constituents. All deposition experiments reported here are carried out in an AIXTRON horizontal hot-wall reactor. Molybdenum hexacarbonyl (MCO) and Di-tert-butyl sulfide (DTBS) are used as Mo and S sources, respectively. The samples are characterized via Raman spectroscopy, photoluminescence (PL) spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM) to investigate their optical and structural properties. To reduce and control the nucleation density and to promote a layer-by-layer growth mode, the growth parameters such as DTBS and MCO precursor flows are optimized and temperature treatment was adjusted.