Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 15: Focus Session: Two-dimensional materials II (joined session with TT)

HL 15.8: Vortrag

Montag, 20. März 2017, 17:30–17:45, POT 81

Ion implantation of 2D transition metal dichalcogenides monolayers — •Jhih-Sian Tu¹, Sven Borghardt¹, Hans Hofsass², Ursel Bangert³, Quentin Ramasse⁴, Detlev Grützmacher¹, and Beata Kardynał¹ — ¹PGI 9, Forschungszentrum Jülich, Jülich, Germany — ²II. Physikalisches Institut, Georg-August-University Göttingen, Göttingen, Germany — ³Department of Physics, Univsity of Limerick, Limerick, Ireland — ⁴SuperSTEM Laboratory, Daresbury, UK

Monolayer transition metal dichalcogenides (TMDs) have gained interest as material for optoelectronics. In order to realise the technological potential of the TMDs semiconductors, it is desirable to be able to form heterostructures and introduce dopants in the monolayers. In this study, we examine the possibility to do so using ion implantation. We show that chalcogen atoms of the monolayer MoS2 can be substituted using very low energy ion beams (<50 eV) as verified using Raman spectroscopy and scanning transmission electron microscopy. Implantation levels of a few percent are realised with no structural damage visible in Raman spectra. Significant changes of the photoluminescence compared with pristine MoS2 monolayers are observed at cryogenic temperature. The technique under development is to be applied for forming lateral heterostructures of 2D TMDs.