Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 18: Semiconductor Lasers II

HL 18.8: Talk

Monday, March 20, 2017, 17:00–17:15, POT 06

Optical losses in intra-cavity heat spreaders for GaSb based VECSELs — •Chiara Lindner, Steffen Adler, Peter Holl, Andreas Bächle, Elke Diwo-Emmer, Rolf Aidam, and Marcel Rattunde — Fraunhofer-Institut für Angewandte Festkörperphysik IAF, Tullastr. 72, D-79108 Freiburg, Germany

Semiconductor disk lasers, also known as vertical-external-cavity surface-emitting lasers (VECSEL), exhibit the wavelength versatility of semiconductor lasers in combination with the capability of a nearly diffraction-limited high-power output. In order to achieve this, an efficient heat extraction from the active medium is needed. For GaSb (and also InP) based VECSEL, heat extraction through the distributed Bragg reflector is inefficient and thus has to be realized with an intra-cavity heat spreader. Due to their transparency at emission and pump wavelength and high thermal conductivity, silicon carbide (SiC) and diamond are most often applied.

Using a diamond heat spreader, a GaSb based VECSEL with up to 20 W output power at room temperature at 2 µm emission wavelength has been reported recently. However, the quality of the optical grade diamond still differs significantly from sample to sample.

In this presentation, we report on the results of a new experimental setup designed to determine the optical intra-cavity losses and the homogeneity of heat spreaders. We will compare different SiC and diamond based samples and discuss their influence on power scaling of VECSEL with an intra-cavity heat spreader.