Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 25: Poster: Nitrides

HL 25.12: Poster

Montag, 20. März 2017, 15:00–19:00, P2-OG2

Investigation of crystal properties of epitaxially grown BAlN layers with boron content in the lower percentage range — •Jan-Patrick Scholz¹, Sebastian Bauer¹, Oliver Rettig², Yueliang Li³, Haoyuan Qi³, Johannes Biskupek³, Ute Kaiser³, Ferdinand Scholz², and Klaus Thonke¹ — ¹Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany — ²Institute of Optoelectronics, Ulm University, 89081 Ulm, Germany — ³Central Facility of Electron Microscopy, Ulm University, 89081 Ulm, Germany

AlGaN based UV-LEDs development is currently in progress. These LEDs still suffer from low external quantum efficiencies. One of the major problems is the high amount of threading dislocations, which emerge mostly due to the lattice mismatch of AlGaN layers on AlN.

Wurtzite BN is expected to have a smaller lattice constant than AlN, what helps to compensate the increase of the lattice constant when adding gallium to AlN.

First samples of AlBN layers on AlN substrate show a big change in surface morphology and luminescence properties: Typically columnar growth is found, and the surface roughness increases. We show cross section TEM micrographs to reveal details about the growth mode. According to SIMS, ~5% boron are incorporated in the AlBN layers.