Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster: Nitrides
HL 25.21: Poster
Monday, March 20, 2017, 15:00–19:00, P2-OG2
Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a (10-11) semipolar GaN template — •yueliang li1, haoyuan qi1, tobias meisch2, matthias hocker3, klaus thonke3, ferdinand scholz2, and ute kaiser1 — 1Central Facility of Electron Microscopy, Electron Microscopy Group of Materials Science, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany — 2Institute of Optoelectronics, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany — 3Institute of Quantum Matter, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany
InGaN/GaN heterostructures grown on semipolar GaN templates have received considerable attention over the past years for the fabrication of LEDs operating in the green spectral range. However, the quantum efficiency is still substantially lower than that of their blue counterparts due to the defects such as dislocations and stacking faults, which appear during the growing process.
In this work, I2-type basal stacking faults were observed in In0.25Ga0.75N multiple quantum wells grown on a (10-11) GaN template by HRTEM. The structure and formation mechanism of the I2-type stacking faults were investigated. The relationship between the In content in the InGaN layer and the density of the I2-type stacking faults is discussed.