Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster: Nitrides
HL 25.22: Poster
Monday, March 20, 2017, 15:00–19:00, P2-OG2
Epitaxial growth and characterization of thin AlBGaN layers with low boron content — •Natja Steiger1, Jan-Patrick Scholz1, Sebastian Bauer1, Oliver Rettig2, Tomáš Hubáček2, Haoyuan Qi3, Yueliang Li3, Johannes Biskupek3, Ute Kaiser3, Ferdinand Scholz2, and Klaus Thonke1 — 1Institut of Quantum Matter/ Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany — 2Institute of Optoelectronics, Ulm University, 89081 Ulm, Germany — 3Central Facility of Electron Microscopy, Ulm University, 89081 Ulm, Germany
The development and design of efficient LEDs for the ultraviolet regime is of great interest, aiming at applications like water purification and sterilization. Using AlGaN as material for such an ultraviolet solid-state light source, the desired emitted wavelength can be chosen by variation of relative Al/Ga content. We try to incorporate boron into this material to reduce the lattice mismatch between the optically active AlBGaN layer and AlN barrier layer of the QWs. Lattice matching leads to a reduction of QCSE caused by strain.
Our AlBGaN thin layers are grown by MOVPE on AlN templates with sapphire as substrate at growth temperatures up to 1400∘C. To examine the crystal structure and quality X-ray diffraction, scanning- and transmission electron microscopy and atomic force microscopy are performed. By exciting the samples with an ArF-laser, photoluminescence spectroscopy is used for further characterization of the samples.