Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Poster: Nitrides

HL 25.23: Poster

Monday, March 20, 2017, 15:00–19:00, P2-OG2

Angular dependence of the Raman scattering intensity of optical phonons in wz-GaN — •Simon Brehm, Christian Röder, Cameliu Himcinschi, and Jens Kortus — TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany

Gallium nitride (GaN) as one of the most promising wide-bandgap semiconductors has been studied intensively over the two last decades due to its numerous opto- and microelectronic applications. In this work, the angular dependence of the Raman scattering intensity of optical phonon modes was investigated in backscattering geometry using an a-plane oriented GaN thin film. For this purpose, two experimental approaches were realized as the observed Raman scattering intensity is connected with the scattering geometry by the so-called Raman tensor elements. At first the GaN sample was turned in-plane with respect to the laboratory coordinate system while the polarization directions of exciting and scattered light remained the same. Secondly, sample and position of the analyzer were fixed with respect to the laboratory coordinate system and the polarization direction of the incident laser beam was rotated. Using relative Raman scattering cross sections [1] the experimental results were found to be in an excellent agreement with theoretical simulations.

This work is financially supported by the European Union (European Social Fund) and by the Saxonian Government (grant no. 100231954).

[1] Irmer et al. J. Appl. Phys. 116 (2014) 245702