Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 25: Poster: Nitrides

HL 25.6: Poster

Montag, 20. März 2017, 15:00–19:00, P2-OG2

In-situ monitoring of opto-coupler degradation during high energy proton irradiation — •Heinz-Christoph Neitzert¹, Carmine Pellegrino¹, Giovanni Landi¹, Sophie Seidel², Jürgen Bundesmann², and Andrea Denker² — ¹Dept. of Industrial Engineering (DIIn), Salerno University, Via Giovanni Paolo II 132, 84084 Fisciano (SA), Italy — ²Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Protons for Therapy, Hahn-Meitner Platz 1, 14109 Berlin, Germany

The degradation under a high energy proton beam of a series of industrial opto-couplers, consisting of GaAs based LEDs and Silicon phototransistors, has been tested by monitoring ex-situ typical parameters, like current-transfer-ratio, receiver photo-current and -voltage, transistor gain and LED current-voltage characteristics. The devices have been irradiated with a 68 MeV proton beam with different fluences between 10¹¹ p+/cm² and 10¹³ p+/cm². These are typical conditions that are relevant for space missions. In order to distinguish between GaAs emitter degradation and Silicon receiver degradation, the photocurrents of both emitter and receiver diodes have been monitored in-situ during the irradiation. In this way we could verify that the emitter degradation saturates for intermediate irradiation levels of 10¹² p+/cm², while the receiver degradation is continuous and for 10¹³ p+/cm² a photocurrent decrease of about 5 orders of magnitude has been found. A beneficial effect of the irradiation in terms of switching speed has been observed, which may be interesting for low-level irradiated devices.