Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Organic Electronics and Photovoltaics III: Mobile and Trapped Charges

HL 31.4: Talk

Tuesday, March 21, 2017, 10:15–10:30, ZEU 260

Utilizing Schottky barriers to suppress short channel effects in organic transistors — •Antón F. Fernández and Karin Zojer — Institute of Solid State Physics and NAWI Graz, Graz University of Technology, Graz, Austria

High switching speeds constitute one of the optimization targets for organic thin film transistors (OTFT). Reducing the channel length is a major handle to boost the switching speed of OTFTs. However, upon reducing the channel length one has to cope with undesired short-channel effects, i.e., a loss of saturation, a reduced ON-OFF ratio, and a disproportionally larger impact of the contact resistance. We demonstrate by virtue of device simulations that the ON-OFF-ratio of a short channel transistor is enhanced by orders of magnitude when a Schottky barrier at the injecting contact is intentionally introduced. The key effect is the efficient suppression of the OFF-current while trading in only a small loss in the ON current. We show that, in fact, it is possible to establish a minimal Schottky barrier such that the short channel transistors can be operated without premature turn-on while retaining an ON current as large as expected from Gradual Channel approximation. This strategy is suited for staggered and coplanar transistor architectures.