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HL: Fachverband Halbleiterphysik
HL 33: Quantum Dots: Optical Properties I
HL 33.3: Vortrag
Dienstag, 21. März 2017, 10:15–10:30, POT 81
Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions — •Michael Zopf1, Robert Keil1, Yan Chen1, Bianca Höfer1, Jiaxiang Zhang1, Fei Ding1,2, and Oliver G. Schmidt1,3 — 1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany — 2Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany — 3Merge Technologies for Multifunctional Lightweight Structures, Technische Universität Chemnitz, Germany
Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon pairs. Despite remarkable progress in the last twenty years, many challenges remain for this material, such as extremely low yield (<1% quantum dots can emit entangled photons), low degree of entanglement, and large wavelength distribution. Here we show that, with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble (close to 100%) of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement (fidelity up to F = 0.91, with a record high concurrence C = 0.90), and ultra-narrow wavelength distribution at rubidium transitions. Therefore, a solid-state quantum repeater can be practically implemented with this new material.