Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Quantum Dots: Optical Properties I
HL 33.7: Talk
Tuesday, March 21, 2017, 11:45–12:00, POT 81
Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots — •Daniel Huber1, Marcus Reindl1, Yongheng Huo2,1, Huiying Huang1, Johannes S. Wildmann1, Oliver G. Schmidt2, Armando Rastelli1, and Rinaldo Trotta1 — 1Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstr. 69, 4040, Austria — 2Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Germany
The development of scalable sources of non-classical light is fundamental to unlock the technological potential of quantum photonics. Among the systems under investigation, semiconductor quantum dots (QDs) are currently emerging as near-optimal sources of indistinguishable single photons. However, experiments on conventional Stranski-Krastanow InGaAs QDs have reported non-optimal levels of entanglement and indistinguishability of the emitted photons. For applications such as entanglement teleportation and quantum repeaters, these criteria have to be met simultaneously. In this talk, I will present a material system that has received limited attention so far: GaAs QDs grown via droplet etching. I will demonstrate that under resonant excitation these highly symmetric QDs deliver photon pairs with high degree of indistinguishability and with an unprecedented degree of entanglement fidelity. The results suggest that if QD entanglement resources will be used for future quantum technologies, GaAs might be the material system of choice
[arXiv:1610.06889] .