Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: Focus Session: Topological Insulators on Coupled Quantum Wells (joined session with TT)
HL 35.6: Vortrag
Dienstag, 21. März 2017, 12:00–12:15, POT 151
Gate-tunable spin-charge conversion in single-layer graphene — •Masashi Shiraishi1, Sergey Dushenko1, Yuichiro Ando1, Hiroki Ago2, Taishi Takenobu3, Susumu Kuwabata4, and Teruya Shinjo1 — 1Kyoto University, Japan — 2Kyushu University, Japan — 3Nagoya University, Japan — 4Osaka University, Japan
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. In this presentation, an electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene is reported [1]. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long- standing question in graphene research. Our study shows a simple spatial inversion symmetry breaking is not sufficient for generating the inverse Rashba-Edelstein effect, which is contrary to a conclusion in the other study [2].
References: [1] S. Dushenko, M. Shiraishi et al., Phys. Rev. Lett. 116, 166102 (2016). [2] J.B.S. Mendes et al., Phys. Rev. Lett. 115, 226601 (2015).