Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: III-V Semiconductors
HL 37.10: Vortrag
Dienstag, 21. März 2017, 12:15–12:30, POT 112
Optical Characterization of Quaternary GaInAsBi Semiconductor Alloys — •Julian Veletas1, Lukas Nattermann1, Thilo Hepp1, Kerstin Volz1, and Sangam Chatterjee2 — 1Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2I. Physikalisches Institut, Justus-Liebig-Universtität Gießen, D-35392 Gießen, Germany
Dilute bismuth-containing semiconductor alloys such as GaAsBi are attracting significant attention due to their promising characteristics in near- and mid-infrared laser applications. The incorporation of Bismuth leads to a strong reduction of the bandgap commonly described by an anti crossing process in the valence bands of the host material. Consequently, the split-off band separation ΔSO also increases. This leads to a suppression of non-radiative Auger recombination and, thus an enhanced performance of future devices. For example, ΔSO even surpasses the bandgap energy Egap for more than 4% bismuth incorporation in GaInAsBi alloys. Here, we study a series of GaInAsBi/GaInAs/InP epilayers grown by metal-organic vapor-phase epitaxy. Modulation spectroscopy is applied to identify the optical transitions in the quaternary alloy. Comparing the results with temperature-dependent photoluminescence data measurements reveals only a small Stokes Shift and very little disorder signatures.