Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: III-V Semiconductors

HL 37.1: Talk

Tuesday, March 21, 2017, 09:30–09:45, POT 112

GaAs Based Nanowire Lasers and their integration onto Silicon Waveguides — •Tobias Kostenbader, Thomas Stettner, Jochen Bissinger, Daniel Ruhstorfer, Philipp Zimmermann, Gerhard Abstreiter, Gregor Koblmüller, and Jonathan Finley — Walter Schottky Institut and Physik Department, Technische Universität München

III-V semiconductor nanowires (NW) have been demonstrated to be a highly promising candidate for nanoscale coherent light sources suitable for on-chip data communication [1].

In this work we present a study of coaxial GaAs-AlGaAs NW lasers with either bulk GaAs or single and multiple coaxial GaAs quantum wells (QW) as active gain media. We observe single mode lasing of both bulk and core-multishell NW lasers, as confirmed by characteristic s-shaped input-output behavior when subject to optical pumping, as well as a blueshift of the emission due to quantum confinement in the QWs. We show that the emission energy and gain of the NW laser can be controlled epitaxially during growth.

Furthermore, we present a monolithic integration scheme that enables the site-selective growth of GaAs-AlGaAs core-shell NW lasers on silicon-on-insulator and silicon ridge waveguides (WGs). Here, an 80nm thick dielectric interlayer at the NW-WG interface ensures high modal reflectivities and allows lasing operation on the ridge WG. Our results represent a step towards III-V NW lasers that can be site-selectively integrated on silicon.

[1] B. Mayer, et al. Nano Lett. 16 (1), pp 152-156(2016).