Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: III-V Semiconductors
HL 37.2: Vortrag
Dienstag, 21. März 2017, 09:45–10:00, POT 112
Ferromagnetic (Ga,Mn)P: magneto-transport properties and co-doping effect — •Chi Xu1,2, Ye Yuan1,2, Mao Wang1,2, Hendrik Hentschel1,2, Roman Böttger1, Manfred Helm1,2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany — 2Technische Universität Dresden, D-01062 Dresden, Germany
The III-Mn-V based diluted magnetic semiconductor offers an opportunity to explore various aspects of carrier transport in the presence of cooperative phenomena. In this work, GaP is chosen as a host semiconductor for magnetic dopants due to its large bandgap (2.2 eV) and short bond length (0.545 nm) with the possibility of obtaining strong p-d hybridization . We have prepared Mn-doped GaP by combining ion implantation and pulsed laser melting and make a systematic investigation on the magnetic and transport properties of (Ga,Mn)P by varying Mn concentration as well as by Zn co-doping. All samples show insulating behavior and different negative magnetic resistance are observed, which indicate that the local moment from Mn 3d electrons have interaction with the holes introduced by Zn co-doping.