Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: III-V Semiconductors
HL 37.3: Talk
Tuesday, March 21, 2017, 10:00–10:15, POT 112
GaSb-based Double Barrier Resonant Tunneling Diodes with Ternary Emitter Prewells — •Andreas Pfenning1, Georg Knebl1, Fabian Hartmann1, Robert Weih1, Andreas Bader1, Monika Emmerling1, Martin Kamp1, Sven Höfling1,2, and Lukas Worschech1 — 1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 2SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, United Kingdom
We demonstrate room temperature operation of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown emitter prewell structures consisting of the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, no resonant tunneling is observed for structures without emitter prewells. For resonant tunneling structures comprising emitter prewells, room temperature resonant tunneling is evident with pronounced current resonances and regions of negative differential resistance. The respective peak-to-valley current ratios are 1.45 and 1.36 for Ga0.84In0.16Sb and GaAs0.05Sb0.95 emitter prewells, respectively. The incorporation of a ternary emitter prewell leads to an enhanced Γ-L valley energy separation with respect to bulk GaSb. A repopulation of the Γ-valley states and a depopulation of the L-valley states is achieved and undesired transport channels via L-valley states are reduced.