Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: III-V Semiconductors
HL 37.4: Vortrag
Dienstag, 21. März 2017, 10:15–10:30, POT 112
In-Plane Gate transistors for use of sensing gaseous and liquid dielectric environments. — •Benjamin Feldern, Sascha R. Valentin, Arne Ludwig, and Andreas D. Wieck — Angewandte Festkörperphysik, Ruhr-Univesität Bochum, 44801 Bochum, Germany
For the purpose of sensing dielectrics, In-Plane-Gate (IPG) transistors are written in Gallium-Arsenide based high-electron-mobility-transistor (HEMT) structures using focused ion beam implantation. These FIB-implanted IPGs are to be used to sense dielectrics in different compositions. Using the Petrosyan-Stikh formula for the depletion length of the implanted region in addition to the representation of the IPG by a parallel-plate geometry by de Vries and Wieck, the dielectric constant of the environment can be calculated and analysed. We demonstrate an influence of the dielectric on the properties, while a quantitative analysis still shows some deviations. Beyond this, also surface treatments were performed and tested on their influence of the sensing capability. It was found that surface depletion was increased by both exposure of the IPGs to an N2-Plasma as well as dipping in N2H8S.