Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: III-V Semiconductors
HL 37.7: Vortrag
Dienstag, 21. März 2017, 11:30–11:45, POT 112
Evaluation of growth parameters of InAs nanowires toward vertical field effect transistor devices — •Stampfer Lukas, Jonathan Becker, Stefanie Morkötter, Julian Treu, Gerhard Abstreiter, Jonathan J. Finley, and Gregor Koblmüller — Walter Schottky Institut and Physik Department, Technische Universität München, 85748 Garching
InAs nanowires (NWs) show great promise for future electronic applications due to their high charge-carrier-mobility, their integrability on common silicon semiconductor technology and the feasibility of high precision epitaxial on-chip-growth. The unique geometrical shape and high aspect ratio of NWs allow for effective wrap gating on standing NWs and therefore hold great potential for field effect transistors with low subthreshold-swing and minimized short-channel effects.
In this work the effects of growth conditions of nominally undoped InAs were evaluated with respect to the structural and electrical transport properties. The catalyst-free MBE grown NWs were characterized via HRTEM and back-gated planar 4-terminal measurements. The electrical measurements revealed room-temperature mobilities ranging from 500 to 2200 cm2/Vs depending on growth conditions, on-off ratios above 103 at 4.2 K and an electron density of of 1017 cm3 limited by surface state mediated electron accumulation. From temperature-dependent FET measurements different carrier activation behavior was found and directly correlated with the different microstructure. First endeavors in the fabrication of vertical single-NW InAs FET devices via advanced selective area epitaxy growth are presented.