Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: III-V Semiconductors

HL 37.9: Talk

Tuesday, March 21, 2017, 12:00–12:15, POT 112

Formation of self-organized nanostructures by droplet epitaxy on AlGaAs(111)B — •Alexander Karlisch and Dirk Reuter — Optoelektronische Materialien und Bauelemente, Universität Paderborn, 33098 Paderborn, Germany

Quantum dots (QDs) on the (111)-surface of (Al)GaAs are potential emitters of entangled photons due to the reduced fine structure splitting. QDs on this surface can be grown by the droplet epitaxy (DE) method, where group III metal droplets are formed in a first step and crystallized under As-flux in a second step. In this contribution we present a study on the formation of group III metal droplets on Al_0.33Ga_0.66As(111)B and their crystalization due to an As flux. The samples are grown by solid-source molecular beam epitaxy on a GaAs(111)B substrate with 1^∘ miscut towards (211). Atomic-force microscopy measurements show density and shape of nanostructures formed by DE at different substrate temperatures and deposition rates after droplet formation and after crystallization, respectively.