Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 38: Zinc Oxide

HL 38.1: Talk

Tuesday, March 21, 2017, 09:30–09:45, POT 06

Al-doped ZnO nanowires grown by PLD — •Alexander Shkurmanov, Chris Sturm, Holger Hochmuth, and Marius Grundmann — Universität Leipzig, Inst. for Exp. Phys. II, Linnéstr. 5, 04103 Leipzig, Germany

ZnO nanowires (NWs) attract a lot of interest and can be used as building blocks for different devices e.g. light emitters, resonators and sensors. At the same time, doping of the ZnO NWs by Al leads to increase of their conductivity [1], luminescence intensity [2], and optical transmission [3] in comparison with undoped ZnO. This makes doped ZnO NWs promising for a wide range of applications.

Here we present the growth of Al doped ZnO NWs on ZnO seed layers by pulsed laser deposition (PLD). We demonstrate that the choice of the seed layer as well as a growth temperature determine the shape of the NWs and allow to vary diameter of the NWs diameter from 550 nm to less than 7 nm. Furthermore, by comparing the NW growth of undoped ZnO wires on the same kind of the seed layers allows deeper insight into the growth mechanism of the ZnO wires.

[1] G. Zimmermann et al., Phys. Status Solidi RRL 4, 3-4 2010

[2] C.-L. Hsu et al., RSC Adv., 4, 2980, 2014

[3] C. M. Garcia et al., Advances in Materials Physics and Chemistry, 2, 56, 2012