Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 41: Nitrides: Preparation

HL 41.1: Vortrag

Dienstag, 21. März 2017, 11:45–12:00, POT 06

Molecular beam epitaxy and characterization of InGaN nanowires on Si (111) — •Saskia Weiszer¹, Maximilian Kolhep¹, Maria de la Mata², Jordi Arbiol², and Martin Stutzmann¹ — ¹Walter Schottky Institut and Physics Department, TUM, 85748 Garching, Germany — ²Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), UAB, 08193 Bellaterra, Spain

InGaN has a variable band gap that covers nearly the entire solar spectrum. Combined with Si, theoretical considerations show that an InGaN/Si solar cell could be an optimal implementation of a double-junction cell. In particular at an In content of around 50%, it is expected that a resonant tunnel junction is formed between both materials. Furthermore, the cell efficiency could be increased by growing nanowires instead of thin films to make use of the fact that nanowires act as a natural anti-reflection coating and to reduce structural defects. InGaN nanowires on Si (111) are grown via molecular beam epitaxy. Different growth series with varying III/V ratio, substrate temperature and Ga/In ratio are characterized by EDX, HRXRD and Raman scattering. EELS elemental maps of single nanowires confirm a strong fluctuation of In content within the InGaN nanowires. Despite the compositional inhomogeneity of InGaN nanowires, electrical characterization of nominally intrinsic InN nanowires grown on differently doped Si (111) substrates has been performed. With regard to device fabrication, first results of selective area growth of InN nanowires with different mask materials are discussed.