Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 41: Nitrides: Preparation

HL 41.2: Vortrag

Dienstag, 21. März 2017, 12:00–12:15, POT 06

Growth Analysis of GaN Quantum Dots using Cathodoluminescence Microscopy — •Hannes Schürmann, Christoph Berger, Sebastian Metzner, Gordon Schmidt, Peter Veit, Frank Bertram, Armin Dadgar, Jürgen Bläsing, André Strittmatter, and Jürgen Christen — Institute of Experimental Physics, Otto-von-Guericke-Universitity Magdeburg, Germany

GaN quantum dots in AlN are grown by MOVPE applying a growth interruption after the deposition of a thin GaN film. The impact of this growth interruption on the formation of quantum dots is comprehensively analyzed using highly spatially and spectrally resolved cathodoluminescence (CL) microscopy. Structural properties were investigated using scanning transmission electron microscopy. The CL investigation reveals a drastic reduction of the spatial and spectral width of emission with the formation of GaN quantum dots. Time delayed CL spectra show further evidence of successful quantum dot growth.