HL 41: Nitrides: Preparation
Dienstag, 21. März 2017, 11:45–13:00, POT 06
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11:45 |
HL 41.1 |
Molecular beam epitaxy and characterization of InGaN nanowires on Si (111) — •Saskia Weiszer, Maximilian Kolhep, Maria de la Mata, Jordi Arbiol, and Martin Stutzmann
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12:00 |
HL 41.2 |
Growth Analysis of GaN Quantum Dots using Cathodoluminescence Microscopy — •Hannes Schürmann, Christoph Berger, Sebastian Metzner, Gordon Schmidt, Peter Veit, Frank Bertram, Armin Dadgar, Jürgen Bläsing, André Strittmatter, and Jürgen Christen
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12:15 |
HL 41.3 |
Investigation of MBE grown AlN and InN layers under the effect of additional Ga acting as a surfactant — •Christopher Hein, Andreas Kraus, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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12:30 |
HL 41.4 |
high quality Al films grown by molecular beam epitaxy — •Bowen Sheng, Yixin Wang, Zhaoying Chen, Ping Wang, Frank Bertram, Jürgen Christen, and Xinqiang Wang
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12:45 |
HL 41.5 |
MOVPE-growth of GaN quantum dots on deep UV AlN/AlGaN distributed Bragg reflectors — •Christoph Berger, Hannes Schürmann, Sebastian Metzner, Gordon Schmidt, Jürgen Bläsing, Armin Dadgar, Frank Bertram, Jürgen Christen, and André Strittmatter
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