Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 49: Quantum Dots: Optical Properties III
HL 49.8: Vortrag
Mittwoch, 22. März 2017, 11:45–12:00, POT 151
Far-field and quality factor optimized GaAs-based photonic crystal cavities with high collection efficiencies — •Stefan Hepp, Simone L. Portalupi, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology IQST and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
The optical properties of semiconductor quantum dots (QDs) integrated in photonic crystal cavities can be further improved via cavity quantum electrodynamic effects. Therefore the realization of cavities with both high quality factor Q and small modal volume V are from interest to achieve a large enhancement factor. Efforts have been made to optimize the Q-factor that in some cases turns out to be detrimental for the collection efficiency because the related strong light confinement can lead to an inferior directivity for the out-of-plane emission. Here we present theoretical and experimental studies on the simultaneous optimization of the Q-factor and the far-field emission profile of the frequently utilized L3-photonic crystal cavity. We fabricated, characterized and compared cavities with different degree of optimization via µ-PL and back focal plane imaging and show that the out-of-plane radiation profile can be optimized to an almost Gaussian distribution making the light collection effective and the efficient coupling to fibers available. Despite the far-field optimization, the Q-factors still reach values as high as 6x103 showing that a good compromise between a high Q-factor and a near optimal emission profile can be achieved.