Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: Nitrides: Preparation and Characterization

HL 50.11: Vortrag

Mittwoch, 22. März 2017, 12:45–13:00, POT 251

Photon statistics of high-β gallium nitride nanobeam lasers — •Stefan T. Jagsch¹, Noelia Vico Triviño², Gordon Callsen¹, Stefan Kalinowski¹, Ian M. Rousseau², Jean-François Carlin², Raphaël Butté², Axel Hoffmann¹, Nicolas Grandjean², and Stephan Reitzenstein¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin — ²École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

The search for an ultimate nanolaser is a central goal in nanophotonics, and has led to cutting edge research at the crossroads between device physics and quantum optics. Such nanolasers employ cavity-enhanced light-matter coupling in order to greatly reduce the lasing threshold, desirable for future on-chip nanophotonic applications. Nitride nanobeam cavities grown on silicon present an ideal system to study such high spontaneous emission coupling factor (β) lasers under realistic device conditions (room temperature & ambient atmosphere) [1]. In a detailed, temperature dependent optical and quantum-optical characterization we show that classical lasing indicators are at best ambiguous for high-β devices, while photon statistics remain a sensitive indicator of the lasing transition. By analysing the temperature dependent carrier confinement in the gain medium, we can explain thresholdless lasing by the temperature- and excitation power dependent interplay of 0D and 2D gain contributions [2].
Triviño et al. Nano Lett. 15(2), 2015
Jagsch et al. arXiv:1603.06447