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09:30 |
HL 50.1 |
Hauptvortrag:
Photoactivated chemical processes on group III-nitride nanostructures and nanohybrids — Paula Neuderth, Sara Hölzl, Pascal Hille, Jörg Schörmann, Christian Reitz, Mariona Coll, Jordi Arbiol, Roland Marschall, and •Martin Eickhoff
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10:00 |
HL 50.2 |
Effective electron mass in cubic GaN — •Elias Baron, Martin Feneberg, Rüdiger Goldhahn, Michael Deppe, and Donat J. As
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10:15 |
HL 50.3 |
Hydrogen-induced modifications of N-polar InN surface properties — •Anja Himmerlich, Stefan Krischok, and Marcel Himmerlich
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10:30 |
HL 50.4 |
Improving lateral current spreading of InGaN LEDs by MOVPE grown GaN tunnel junctions — •Silvio Neugebauer, Andreas Lesnik, Florian Hörich, Hartmut Witte, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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10:45 |
HL 50.5 |
The contribution has been withdrawn.
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11:00 |
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Coffee Break
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11:30 |
HL 50.6 |
Impact of strain and valence band structure on radiative and non-radiative recombination in m-plane GaInN/GaN quantum wells — •Philipp Henning, Torsten Langer, Manuela Klisch, Fedor Alexej Ketzer, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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11:45 |
HL 50.7 |
Strain and compositional fluctuations in AlInN/GaN heterostructures — •Verena Portz, Michael Schnedler, Martial Duchamp, Fei-Man Hsiao, Holger Eisele, Jean-François Carlin, Raphael Butté, Nicolas Grandjean, Rafal E. Dunin-Borkowski, and Philipp Ebert
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12:00 |
HL 50.8 |
Surface properties of p-type, n-type, and semi-insulating GaN layers on sapphire — •Aqdas Fariza, Andreas Lesnik, Silvio Neugebauer, Matthias Wieneke, Jürgen Bläsing, Hartmut Witte, Armin Dadgar, and André Strittmatter
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12:15 |
HL 50.9 |
Conoscopic study: Influence of birefringence on the state of polarization in GaN samples — •Ines Trenkmann, Lukas Uhlig, Matthias Wachs, and Ulrich T. Schwarz
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12:30 |
HL 50.10 |
Anisotropic dielectric function of nonpolar AlGaN up to 20eV — •Michael Winkler, Shigefusa F. Chichibu, Ramon Collazo, Zlatko Sitar, Maciej D. Neumann, Norbert Esser, Rüdiger Goldhahn, and Martin Feneberg
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12:45 |
HL 50.11 |
Photon statistics of high-β gallium nitride nanobeam lasers — •Stefan T. Jagsch, Noelia Vico Triviño, Gordon Callsen, Stefan Kalinowski, Ian M. Rousseau, Jean-François Carlin, Raphaël Butté, Axel Hoffmann, Nicolas Grandjean, and Stephan Reitzenstein
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