Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 52: Devices

HL 52.3: Talk

Wednesday, March 22, 2017, 10:00–10:15, POT 06

Cognitive and memory devices based on Debye length modulation — •Kai-Uwe Demasius — Max Planck Institut für Mikrostrukturphysik, Halle (Saale)

By using a modulation of the screening length in semiconducting and metal-to-insulator transition materials we might reach much higher data storage densities and acess times for ferroelectric memories. A metal-insulator-semiconductor-insulator-metal (MISIM) stack might act as a switch for electric fields, which is interesting to switch and read out the polarization of a ferroelectric material. Furthermore the field transmission through through MISIM-structure shows a hyperbolic tangent behaviour which is interesting as an activation function for artificial neuronal networks.