Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 52: Devices

HL 52.4: Talk

Wednesday, March 22, 2017, 10:15–10:30, POT 06

Single-Emitter Regime and Lasing in High-Q Micropillars with Site-Controlled Quantum Dots — •Arsenty Kaganskiy, Tobias Heuser, Jan Große, Alexander Schlehahn, Sören Kreinberg, Fabian Gericke, Xavier Porte, Tobias Heindel, Sven Rodt, André Strittmatter, and Stephan Reitzenstein — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623

We report on the realization of quantum dot (QD) - micropillar cavities based on a technology platform called buried stressor approach [1]. This method allows for the site-controlled growth and device integration of QDs with high optical quality. In addition, this approach has the important advantage that the number of site-controlled QDs in the cavity can be controlled by the design of the buried stressor. By fine tuning the gain, one can operate these devices as few-QD microlasers or even in the single quantum dot regime. Moreover, the buried-stressor approach ensures that the ensemble with a controlled number of QDs is located in the electric field maximum in the center of the micropillars. The fabricated micropillars exhibit Q-factors up to 30000 at an emission wavelength of 932 nm. Single-QD Purcell-enhancement of the emission is investigated via temperature-induced resonance-tuning. The lasing action of the micropillars is proven by power dependent measurements.

[1] A. Strittmatter et al., Appl. Phys. Lett. 100, 093111 (2012)