Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 52: Devices
HL 52.6: Vortrag
Mittwoch, 22. März 2017, 11:00–11:15, POT 06
Ionic Liquid Gating of Solution Processed MoS2 Thin Film Transistors — •Francis Oliver Vinay Gomes1,2, Xiaoling Zeng2, Marko Marinkovic1, Torsten Balster2, and Veit Wagner2 — 1Evonik Resource Efficiency GmbH, Paul-Baumann-Strasse 1, 45772 Marl, Germany — 2Jacobs University Bremen, Department of Physics & Earth Science, Campus Ring 1, 28759 Bremen, Germany
Ionic liquid (IL) gating of thin film transistors (TFTs) based on solution processed MoS2 obtained from Mo-precursor solution on various substrates has been investigated. Chemical conversion of the deposited films on silicon and sapphire substrates to MoS2 were obtained by annealing in presence of sulfur. Films deposited on amorphous Si/SiO2 substrates showed random grain orientation. However, improved film growth with oriented grains was observed on crystalline sapphire substrates. Raman and XPS, and TEM measurements revealed formation of polycrystalline MoS2 films with grain size of 100 nm.
TFTs fabricated from MoS2 implementing IL gating through electrostatic carrier accumulation exhibited ambipolar transport with dominant n-type behaviour. TFT performance was observed for films thinner than 9 nm due to gate-channel control and the threshold voltage is dependent on the ratio of IL to host polymer mixture. Sapphire in contrast to silicon substrates demonstrated ten times higher ON/OFF ratio attributed to the improved film growth. The efficient use of IL gating achieved in this wet-chemical MoS2 can be extended to quantitatively study other dichalcogenides for future nanoelectronic devices.