Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 59: Nitrides: Preparation and Characterization II
HL 59.10: Talk
Wednesday, March 22, 2017, 17:30–17:45, POT 251
Influence of electric field variation on optical properties of semipolar InGaN/GaN light emitting diodes — •Stefan Freytag1, Michael Winkler1, Tim Wernicke2, Luca Sulmoni2, Ingrid Koslow2, Duc V. Dinh3, Brian Corbett3, Peter J. Parbrook1, Martin Feneberg1, Michael Kneissl2, and Rüdiger Goldhahn1 — 1Institut für Experimentelle Physik, Otto-von-Guericke-Universität, Magdeburg, Germany — 2Technische Universität Berlin, Institute of Solid State Physics — 3Tyndall National Institute, University College Cork, Cork, Ireland
Semipolar InGaN/GaN quantum-well (QW) structures with the (2021) and (2021) surface orientations have attracted a lot of interest in recent years for applications in efficient light emitting diodes. Studies revealed unexpected differences in the energy splitting of QW emission energy as well as the optical polarization degree ρ between the two orientations. We report a comprehensive electro-optical (electroreflectance) characterization of those structures embedded in p-/n-junctions. The analysis yields the optical polarization dependent absorption related transition energies between depletion and forward bias. The data are compared to bias dependent photoluminescence and electroluminescence measurements. Results have been interpreted based on k·p theoretical model calculations.