Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 59: Nitrides: Preparation and Characterization II
HL 59.1: Vortrag
Mittwoch, 22. März 2017, 14:45–15:00, POT 251
High Temperature Vapor Phase Epitaxy of GaN - Investigation of defect related UV luminescence — •Friederike Zimmermann1, Franziska C. Beyer1, Gleb Lukin2, Tom Schneider2, Olf Pätzold2, Mykhailo Barchuk3, and Johannes Heitmann3 — 1Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg, — 2Institute of Nonferrous Metallurgy and Purest Materials, TU Bergakademie Freiberg, 09599 Freiberg, — 3Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg,
Compared to conventional growth techniques like hydride vapor phase epitaxy and metalorganic vapor phase epitaxy point defect formation for GaN grown by high temperature vapor phase epitaxy (HTVPE) is not yet well understood. We report on a photoluminescence study on GaN grown by HTVPE with a systematic variation of Ga temperature and growth pressure.
Photoluminescence spectra recorded at 15 K show a strong ultraviolet luminescence (UVL) with zero phonon line at 3.27 eV. The intensities of all other defect related transitions are lower by at least one order of magnitude. The high relative intensity of this donor-acceptor pair recombination can not be explained by a high concentration of acceptor impurities. Silicon and boron are the main impurities, whereas magnesium is present in the range of mid 1015 cm−3 only. Reduced Ga temperature and growth pressure result in better surface morphology and structural quality as well as a significant drop of relative UVL intensity.