Dresden 2017 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 59: Nitrides: Preparation and Characterization II
HL 59.2: Talk
Wednesday, March 22, 2017, 15:00–15:15, POT 251
Internal quantum efficiency of strain controlled semipolar GaInN/GaN quantum wells — •Fedor Alexej Ketzer1, Philipp Horenburg1, Heiko Bremers1, Uwe Rossow1, Florian Tendille2, Philippe De Mierry2, Philippe Vennéguès2, Jesús Zúñiga-Pérez2, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, Technische Universität Braunschweig — 2Centre de Recherche sur l’Hétéro-Epitaxie, Valbonne, France
In this contribution we report on the effect of strain manipulation on internal quantum efficiencies (IQE) of semipolar (1122) multi quantum well (MQW) structures. For strain control we use AlInN interlayers prior to the MQW structure. Due to the large range of possible lattice constants for different AlInN compositions, we can control the strain in the MQW in a wide range. Relaxation of strain in the MQW region is one of the main reasons for a lowered IQE at high indium concentrations, necessary for long emission wavelengths. We compare samples, grown via low pressure MOVPE on (1122) GaN templates grown on patterned r-sapphire substrates, with and without AlInN interlayer and different growth conditions for the MQWs. We determine the structural properties of our samples by high resolution X-ray diffraction. The IQEs are measured by temperature and excitation power dependent photoluminescence spectroscopy with resonant excitation. We observe a redshift of our strain-manipulated samples associated with an increased indium content in the quantum wells. Our samples show high IQEs of up to 44% and 30% at 300 K for emission wavelengths of 545 nm and 575 nm, respectively.