Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 59: Nitrides: Preparation and Characterization II
HL 59.6: Vortrag
Mittwoch, 22. März 2017, 16:30–16:45, POT 251
Depth and laterally resolved cathodoluminescence spectroscopy on Ga(In)N quatum well structures — •Matthias Hocker1, Pascal Maier1, Ingo Tischer1, Tobias Meisch2, Marian Caliebe2, Ferdinand Scholz2, and Klaus Thonke1 — 1Semiconductor Physics Group, University of Ulm — 2Institute of Optoelectronics, University of Ulm
We present the combination of lateral and depth-resolved cathodoluminescence (CL) spectroscopy on a Ga(In)N based LED sample. It is demonstrated how the analysis of depth-resolved CL measurements can be enhanced by taking semiconductor-specific parameters such as exciton diffusion length and band gap energies into account for the corresponding Monte-Carlo simulation of the primary electron scattering. The results of the depth-resolved measurement were found to be in very good agreement with the layer thickness values expected from growth conditions. We show, how a semi-threedimensional schematic model of the sample under investigation can be reconstructed from the experimental data, and which amount of information can be obtained by this measurement method.