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14:45 |
HL 59.1 |
High Temperature Vapor Phase Epitaxy of GaN - Investigation of defect related UV luminescence — •Friederike Zimmermann, Franziska C. Beyer, Gleb Lukin, Tom Schneider, Olf Pätzold, Mykhailo Barchuk, and Johannes Heitmann
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15:00 |
HL 59.2 |
Internal quantum efficiency of strain controlled semipolar GaInN/GaN quantum wells — •Fedor Alexej Ketzer, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Florian Tendille, Philippe De Mierry, Philippe Vennéguès, Jesús Zúñiga-Pérez, and Andreas Hangleiter
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15:15 |
HL 59.3 |
Interplay between yellow and blue luminescence bands in GaN:C — •Zahid Usman, Martin Feneberg, Andreas Lesnik, Marc P. Hoffmann, Armin Dadgar, and Rüdiger Goldhahn
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15:30 |
HL 59.4 |
Time-resolved Investigation of Charge Transfer in Asymmetric Cubic Al0.64Ga0.36N/GaN Double Quantum Wells Grown by MBE — •Tobias Wecker, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Joseph As
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15:45 |
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Coffee Break
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16:15 |
HL 59.5 |
Time-integrated and time-resolved luminescence studies of planar and 3D InGaN/GaN heterostructures — •Angelina Vogt, Jana Hartmann, Hao Zhou, Sönke Fündling, Hergo-Heinrich Wehmann, Andreas Waag, and Tobias Voss
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16:30 |
HL 59.6 |
Depth and laterally resolved cathodoluminescence spectroscopy on Ga(In)N quatum well structures — •Matthias Hocker, Pascal Maier, Ingo Tischer, Tobias Meisch, Marian Caliebe, Ferdinand Scholz, and Klaus Thonke
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16:45 |
HL 59.7 |
Photoluminescence spectroscopy of Ge-doped cubic GaN — •Michael Deppe, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As
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17:00 |
HL 59.8 |
Polarity Control of GaN Nanowires — •Max Kraut, Martin Hetzl, Theresa Hoffmann, and Martin Stutzmann
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17:15 |
HL 59.9 |
Misfit strain as a control parameter in epitaxy of In-rich non- and semipolar GaInN/GaN multi quantum well structures — •Philipp Horenburg, Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow, Florian Tendille, Philippe De Mierry, Philippe Vennéguès, Jesús Zúñiga-Pérez, and Andreas Hangleiter
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17:30 |
HL 59.10 |
Influence of electric field variation on optical properties of semipolar InGaN/GaN light emitting diodes — •Stefan Freytag, Michael Winkler, Tim Wernicke, Luca Sulmoni, Ingrid Koslow, Duc V. Dinh, Brian Corbett, Peter J. Parbrook, Martin Feneberg, Michael Kneissl, and Rüdiger Goldhahn
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