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HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.34: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1A

Electronic Raman scattering from spin-density excitations in a (001)-grown GaAs-AlGaAs quantum well — •Sven Gelfert¹, Alexander Glötzl¹, Christian Reichl², Dieter Schuh¹, Werner Wegscheider², Dominique Bougeard¹, Tobias Korn¹, and Christian Schüller¹ — ¹Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — ²Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich, Schweiz

We performed inelastic light scattering experiments on a 12-nm-wide (001)-oriented GaAs-AlGaAs single quantum well. The investigated system is asymmetrically Si doped to obtain a balanced Rashba and Dresselhaus SOI contribution (α=β). The resulting effective spin-orbit field is either parallel or antiparallel to the [110] in-plane direction.

Measurements on intrasubband transitions of the conduction band in backscattering geometry feature a double peak structure for the [110] direction due to spin splitting, while the [110] direction only shows a single peak. By rotating the sample we could demonstrate a cosine behavior of the spin splitting for intermediate angles between these crystal directions.