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Dresden 2017 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.38: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1A

Meeting the Technical Requirements for High-Power Spin Pumping in Silicon Carbide — •Moritz Fischer1, Andreas Sperlich1, Georgy Astakhov1, and Vladimir Dyakonov1,21Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2Bayerisches Zentrum für Angewandte Energieforschung (ZAE Bayern), 97074 Würzburg

Silicon vacancies in silicon carbide (SiC) have recently been put into the focus of research due to their spin-dependent optical properties being similar to NV centers in diamond [1]. Due to spin-dependent relaxation, optical excitation results in a population inversion at room temperature. As the electron spin resonance associated with the silicon vacancy S=3/2 states can be shifted in an external magnetic field, one can preciseley tune the stimulated microwave emission to the microwave cavity resonance modes. In this study, we concentrate on strongly pumped SiC with the goal to achieve positive MASER gain. A box cavity was designed for the X-Band microwave regime (10 GHz) to be filled with stacked SiC wafers. The gain material is excited with a 15 W diode laser, operating at 810 nm. We investigate the power dependence of the electron spin resonance. The microwave resonator characteristics are analyzed in terms of the cavity Q factor and how it depends on heating due to laser light absorption.

[1] H. Kraus et al., Nature Physics 10, 157 (2014)

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