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HL: Fachverband Halbleiterphysik
HL 63: Poster: Quantum Dots and Optics
HL 63.39: Poster
Wednesday, March 22, 2017, 15:00–19:00, P1A
Commercial Silicon Carbide Diodes for Quantum Sensing Applications — •Dimitrij Poprygin1, Christian Kasper1, Hannes Kraus1, Dmitrij Simin1, Takeshi Ohshima2, Andreas Sperlich1, Georgy V. Astakhov1, and Vladimir Dyakonov1,3 — 1Exp. Physics VI, Julius Maximilian University of Würzburg — 2National Institutes for Radiological Science and Technology (QST, formerly Japan Atomic Energy Agency), Takasaki, Japan — 3ZAE Bayern, Würzburg
Silicon carbide (SiC) is a technologically advanced
semiconductor for high-power and high-temperature electronics and is also a viable candiate for solid-state quantum applications in sensing, rf-devices and quantum computing. This is due to the properties of atomic-scale defects, which rest in stable and cost-effective SiC crystals.
In this study, commercial SiC diodes with varying spatial distribution of Si-vacancies (VSi), produced by electron irradiation, are analyzed in respect of their electrical properties. The work contains current-voltage characteristic measurements and detection of optically-active VSi centers in the intrinsic layer of the diodes. The determination of an irradiation threshold to develop operative diodes with sufficient amount of VSi for nanotesla magnetic field sensing is the main goal in this research. Silicon vacancies in SiC reveal a rf-free and room temperature alternative to nitrogen vacancies (NV) in diamond for sensing applications [1], which is the standard solid state system for quantum-sensing so far.
D. Simin et al., Phys. Rev. X 6, 031014 (2016).