Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 63: Poster: Quantum Dots and Optics
HL 63.40: Poster
Mittwoch, 22. März 2017, 15:00–19:00, P1A
Self assembled InAs islands growth on high-index GaAs substrate by Stranski-Krastanov mode — Patrick Krawiec, Johann Peter Reithmaier, and •Mohamed Benyoucef — Institute of Nanostructure Technologies and Analytic (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany
Quantum dots (QDs) grown on high-index substrates are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting. However, QDs grown on such substrates using conventional Stranski-Krastanov (SK) mode are difficult to realize. The failure of SK-growth on e.g., (111) surfaces has driven the development of alternative growth techniques. In our work, we revisit the challenging SK growth on high-index GaAs substrates using molecular beam epitaxy. By careful control of the growth parameters it was possible to produce a low density of InAs islands, which was confirmed by atomic force microscopy (AFM) measurements. Angle measurements of the island side walls using data derived from AFM reveal clear facets. Optical properties of the grown structure such as emission wavelengths and polarization are determined by micro-photoluminescence (µ-PL) measurements. The low temperature µ-PL measurements prove the formation of 3D nanostructures.