Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.41: Poster

Wednesday, March 22, 2017, 15:00–19:00, P1A

InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths — Andrei Kors, Kerstin Fuchs, Johann Peter Reithmaier, and •Mohamed Benyoucef — Institute of Nanostructure Technologies and Analytic (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

Self-assembled semiconductor quantum dots (QDs) embedded in photonic crystals can be used as building blocks for future quantum information processing. Here, we report on the fabrication and optical characterization of InP-based photonic crystal microcavities embedded with optimized InP-based QDs. Medium InP-based QD density emitting at the telecom wavelengths is grown by solid source molecular beam epitaxy using special capping technique and temperature processing after the dot formation. L3-photonic crystal air-bridge cavities are fabricated by electron beam lithography, inductively coupled plasma reactive ion etching and wet etching technique. The sacrificial layer is removed by selective wet etching, forming a suspended PhC membrane. Optical properties of microcavities such as polarization, emission wavelengths and quality factors are determined by micro-photoluminescence measurements. Results reveal enhanced quantum dot emission, sharp cavity modes and measured quality factors in excess of 8500 at telecom C-band wavelengths.