Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 63: Poster: Quantum Dots and Optics
HL 63.6: Poster
Mittwoch, 22. März 2017, 15:00–19:00, P1A
Optical properties of Tin(IV) oxide prepared by different growth techniques — •Nils Mengel1, Nils W. Rosemann1,2, Martin Becker2, Yinmei Lu2, Angelika Polity2, Peter J. Klar2, and Sangam Chatterjee2 — 1Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2Institute of Experimental Physics I, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
Transparent conducting oxides (TCOs) are currently receiving broad attention for device applications in displays or photovoltaics. An emerging TCO with promising properties is Tin(IV) oxide - SnO2. This material is cheap, very transparent and very thermally and chemically stable while it is at the same time virtually non-toxic [1]. Furthermore, SnO2 shows pronounced infrared reflection which is desirable for heat-managing window-applications. Here, we compare the optical properties of Tin(IV) oxide thin films by absorption and time-resolved photoluminescence spectroscopy. The thin films were deposited by either chemical vapor deposition (CVD) or ion-beam sputter deposition (IBSD) on c-plane and r-plane cut sapphire as well as quartz substrates. The CVD-grown layers are of higher structural quality than the IBSD-grown ones. Regardless, all samples are microcrystalline and the photoluminescence properties are hence dominated by impurity emission. [1] R. G. Gordon, Criteria for Choosing Transparent Conductors, MRS Bulletin 25, 52-57 (2000)