Dresden 2017 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 63: Poster: Quantum Dots and Optics
HL 63.66: Poster
Mittwoch, 22. März 2017, 15:00–19:00, P1A
Investigation of quantum-well and defect luminescence of PAMBE-grown AlGaN/GaN nanowires for single-photon applications — •Johannes Dühn1, Pascal Hille2, Jörg Schörmann2, Martin Eickhoff1,2, Jürgen Gutowski1, and Kathrin Sebald1 — 1Institute of Solid State Physics, University of Bremen, Germany — 2Institute of Experimental Physics I, Justus-Liebig University, Giessen, Germany
Efficient single photon sources are of pivotal importance for experimental quantum optics and cryptography. Currently available schemes of single photon sources and detectors are subject to low signal-to-noise ratios, which greatly inhibits their utilisation in quantum optical applications. A promising approach to this problem is the usage of confined excitons in wide-band-gap materials. Due to confinement, these excitons also possess large binding energies, even exceeding thermal energy at room temperature, which makes them suitable emitters for high-temperature operation. In this work we investigate the micro-PL properties of individual plasma-assisted (PA)MBE-grown nanowires with GaN nanodiscs embedded in AlGaN barriers. We identify emission from single nanowires centered at 3.47eV and 3.45eV belonging to donor-bound excitons and inversion domain boundaries, respectivly. Furthermore, two emission bands from the nanodiscs centered at 3.55eV and 3.66eV are investigated, belonging to the quantum well emission and inversion domain boundaries. The emission from single excitons bound to defects is investigated with respect to their single-photon emission properties by using an HBT interferometer.