Dresden 2017 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.69: Poster

Wednesday, March 22, 2017, 15:00–19:00, P1A

Angle-dependent magnetotransport measurements on single GaN nanowires — •Patrick Uredat, Matthias T. Elm, Pascal Hille, Martin Eickhoff, and Peter J. Klar — I. Physikalisches Institut, Justus Liebig University, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

III-V nanowires increasingly attract attention as building blocks for nanotechnological devices, in particular for optoelectronic devices such as light-emitting diodes or sensors. Thus, it is essential to study the influence of dopants on the transport properties. Angle-dependent magnetotransport measurements yield detailed information about electron transport in nanowires.
Here, we present investigations of the transport properties of GaN nanowires grown by molecular beam epitaxy. Single nanowires have been electrically contacted in four-point geometry using photo- and electron-beam lithography. Temperture-dependent measurements show semiconducting behavior for slightly doped nanowires, whereas nanowires with high doping concentration exhibit a metallic behavior. Magnetotransport measurements reveal a negative magnetoresistance due to weak localization reagardless of the doping concentration. In addition, universal conductance fluctuations (UCFs) have been observed for highly doped wires. Angle-dependent magnetotransport measurements have been performed by varying the angle between magnetic field and nanowire axis. From the angle-dependence of the UCFs one can deduce the distribution of elastic scattering centers and thus reveal the motion of electrons within a single nanowire.