Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.72: Poster

Wednesday, March 22, 2017, 15:00–19:00, P1A

Numerical modeling of InP/AlGaInP quantum dots semiconductor optical amplifier — •Thomas Breier, Zhihua Huang, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center ScoPE and IQST, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Semiconductor Optical Amplifiers (SOAs) show great promises in many applications (e.g. optical communication networks, laser amplifications). Nowadays, the active regions of most SOAs are still mainly focused on the bulk materials and quantum wells. However, quantum dots (QDs) as active region have shown remarkable advantages in SOAs due to its higher material gain, larger gain bandwidth, faster gain recovery and lower threshold current density. This research work is aimed on numerically modeling of a tapered InP/AlGaInP quantum dots SOA emitting at around 660nm. The material gain of the QD layers was obtained by measuring the net model gain in combination with T-Matrix calculations of the confinement-factor of the QDs embedded in waveguides. Based on the measured gain value, the small signal gain, the output saturation power, and the amplified spontaneous emission (ASE) power were estimated. Furthermore, the output electrical field of the tapered waveguide was simulated by using traveling-wave equations (TWE), in order to evaluate the fundamental mode output. Additionally, the field distribution for different taper angles and taper shapes were compared. The simulation results provide a guideline to find the trade-off between high amplification and high beam quality.