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HL: Fachverband Halbleiterphysik

HL 63: Poster: Quantum Dots and Optics

HL 63.73: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P1A

Optical gain and laser characteristics of InP/AlGaInP quantum dots red-emitting laser — •Zhihua Huang, Thomas Breier, Stefan Hepp, Roman Bek, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Centers ScoPE and IQST, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Quantum dots (QDs) as an active layer in laser sources are attractive for many applications due to their excellent properties resulting from their zero-dimensional density of states, e.g. higher optical gain, larger gain bandwidth, lower threshold current density, and temperature insensitivity. In this contribution, we experimentally investigate the properties of the single- and double-layers of InP quantum dots assembled in AlGaInP barrier emitting in the wavelength range around 660 nm, as well as the characteristics of edge emitting lasers with the above mentioned QDs as active region. The self-assembled InP quantum dots layers were grown in the Stranski-Krastanow growth mode by MOVPE at 710 degree with an estimated density of 1e10 cm-2. The optical gain and internal optical loses were measured at room temperature by utilizing segmented contact method at different injected current density, to analyze the amplified spontaneous emission (ASE) as a function of contact stripe length. For a 1-mm long laser with uncoated facets, the experimental results indicated that the single-layer QDs laser has lower threshold current density of 550 A/cm-2 at the heatsink temperature of 278 K. Furthermore, an output power of more than 100 mW per fact was achieved.